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ROHM Develops an Ultra-Compact MOSFET Featuring Industry-Leading* Low ON-Resistance Ideal for Fast Charging Applications

　　ROHM has developed a 30V N-channel MOSFET — AW2K21 — in a common-source configuration that achieves an industry-leading ON-resistance of 2.0mΩ (typ.) in a compact 2.0mm × 2.0mm package.　　With the rise of compact devices featuring large-capacity batteries, such as smartphones, the need for fast charging functionality to shorten charging times continues to grow. These applications require bidirectional protection to prevent reverse current flow to peripheral ICs and other components when not actively supplying or receiving power. What’s more, fast charging involves high current power transfer, leading smartphone manufacturers to demand stringent specifications for MOSFETs, including a maximum current rating of 20A, breakdown voltage between 28V and 30V, and an ON-resistance of 5mΩ or less. However, meeting these requirements with standard solutions typically necessitates the use of two large low ON-resistance MOSFETs, increasing board space along with mounting complexity.　　In response, ROHM developed an ultra-compact low ON-resistance MOSFET optimized for fast high-power charging. The AW2K21 adopts a proprietary structure that enhances cell density while minimizing the ON-resistance per unit chip area. Two MOSFETs are integrated into a single package, allowing a single part to support bidirectional protection applications (commonly required in power supply and charging circuits).　　The proprietary structure also places the drain terminal on the top surface, unlike on the backside in standard vertical trench MOS structures. This enables the use of a WLCSP, which achieves a larger chip-to-package area ratio that further reduces ON-resistance per unit area. As a result, the new product not only minimizes power loss but also supports high current operation, making it ideal for high-power fast charging applications despite its ultra-compact size.　　For example, in power supply and charging circuits for compact devices, standard solutions typically require two 3.3mm × 3.3mm MOSFETs. In contrast, the AW2K21 can achieve the same functionality with a single 2.0mm × 2.0mm unit, reducing the footprint and ON-resistance by approximately 81% and 33%, respectively. Even compared to similarly sized GaN HEMTs, ON-resistance is decreased by up to 50%, contributing to lower power consumption and increased space savings across a variety of applications.　　The AW2K21 is also suitable for use as a unidirectional protection MOSFET in load switch applications, where it maintains the industry’s lowest ON-resistance. At the same time, ROHM is further pushing the limits of miniaturization with the development of an even smaller 1.2mm × 1.2mm model.　　Going forward, ROHM remains dedicated to supporting the miniaturization and energy efficiency of electronic systems through compact, high-performance solutions that contribute to the realization of a sustainable society.　　Key Product Characteristics　　Application Examples　　• Smartphones　　• VR (Virtual Reality) headsets　　• Compact printers　　• Tablets　　　　 • Wearables　　　　　　　　　　 • LCD monitors　　• Laptops　　　　 • Portable gaming consoles　　　 • Drones　　And other applications equipped with fast charging capability.　　Terminology　　MOSFET (Metal Oxide Semiconductor Field Effect Transistor)　　A field-effect transistor (FET) featuring a metal oxide semiconductor structure (the most commonly used type). It consists of three terminals: gate, drain, and source. Applying a voltage to the gate (control terminal) regulates current flow from the drain to the source.　　N-channel MOSFETs turn ON when a positive voltage is applied to the gate relative to the source. A common-source configuration MOSFET integrates two transistor elements that share a single source terminal.　　ON-Resistance　　The resistance between the Drain and Source of a MOSFET when it is in the ON state. A smaller RDS(on) reduces power loss during operation.　　Breakdown Voltage　　The maximum voltage that can be applied between the drain and source terminals of a MOSFET without causing damage. Exceeding this limit results in dielectric breakdown, potentially leading to device failure or malfunction.　　WLCSP (Wafer Level Chip Scale Package)　　An ultra-compact package in which terminals and wiring are formed directly on the wafer before separated into individual chips. Unlike general packages where the chips are cut from the wafer and then molded with resin to form terminals, WLCSP allows the package size to match the chip itself, making it possible to further reduce size.　　GaN HEMT　　GaN (Gallium Nitride) is a compound semiconductor material used in next-generation power devices. It offers superior physical properties over conventional silicon, enabling higher frequency operation with faster switching speeds. HEMT stands for High Electron Mobility Transistor.

Key word：

ROHM

Release time：2025-07-08 17:04 reading：407 Continue reading>>

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BIWIN Spec Industrial-Grade Wide-Temperature eMMC Wins the Industrial Core "New Quality" Award

　　Recently, the results of the 23rd Chinese Automation & Digitalization "New Quality Award" selection, hosted by gongkong®, were officially announced. BIWIN Spec, the industrial and automotive-grade storage brand under BIWIN, clinched the Industrial Core "New Quality" Award for its innovatively developed Industrial-Grade Wide-Temperature eMMC storage solution.　　Backed by BIWIN’s technological expertise and competitive advantages in embedded storage sector, the award-winning TGE208/TGE218 series industrial-grade eMMCs are featured with industrial-grade controllers and NAND Flash, along with proprietary firmware architectures and in-house advanced packaging/testing and manufacturing processes, delivering exceptional performance, ultimate stability, and industrial-grade reliability.　　Furthermore, the products are certified with over 200 rigorous validation tests through BIWIN’s automatic testing system, and also passed the HTOL and ELFR tests under JEDEC standards. Designed for consistent and stable operation in extreme environments, the products are widely applicable across diverse industrial scenarios, including smart security surveillance, data communication, industrial automation, rail transportation, smart power systems, smart healthcare, and IoT terminals.　　In terms of technical specifications, the products strictly follow the eMMC5.1 standards, support the HS400 high speed mode (with data transfer rates up to 400MB/s), and deliver outstanding performance under industrial wide-temperature conditions ranging from -40℃ to +85℃. In addition, the pSLC firmware technical support is also enabled to enhance the capability for data retention, so as to meet the high-frequency read/write needs in industrial scenarios.　　With aims to satisfy the 24/7 uninterrupted operation requirements of industrial equipment, the BIWIN eMMCs are also specifically built with five intelligent management functionalities: the Field Firmware Upgrade (FFU) for remote maintenance, Boot Partition for secure system loading, Replay Protected Memory Block (RPMB) for enhanced data security, idle data acceleration for optimized storage efficiency, and a health monitoring system equipped. Customers can monitor the storage unit’s operational status in real time through a customized interface and dynamically optimize adjustments based on specific application scenarios.　　BIWIN has established stable and close partnerships with supply chain collaborators, providing customers with reliable supply assurances and comprehensive after-sales support throughout the product lifecycle. With years of technical R&D accumulation and an intelligent production and testing system, combined with tiered BOM (Bill of Materials) control and manufacturing process management, the products achieve higher reliability and sustained operational stability.

Key word：

BIWIN

Release time：2025-04-07 13:20 reading：725 Continue reading>>

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ROHM and TSMC Launch Strategic Gallium Nitride Technology Collaboration for Automotive Industry

　　ROHM Co., Ltd. (ROHM) announced today that ROHM and TSMC have entered a strategic partnership on development and volume production of gallium nitride (GaN) power devices for electric vehicle applications.　　The partnership will integrate ROHM's device development technology with TSMC's industry-leading GaN-on-silicon process technology to meet the growing demand for superior high-voltage and high-frequency properties over silicon for power devices.　　GaN power devices are currently used in consumer and industrial applications such as AC adapters and server power supplies. TSMC, a leader in sustainability and green manufacturing, supports GaN technology for its potential environmental benefits in automotive applications, such as on-board chargers and inverters for electric vehicles (EVs).　　The partnership builds on ROHM and TSMC’s history of collaboration in GaN power devices. In 2023, ROHM adopted TSMC’s 650V GaN high-electron mobility transistors (HEMT), whose process is increasingly being used in consumer and industrial devices as part of ROHM's EcoGaN™ series, including the 45W AC adapter (fast charger) "C4 Duo" produced by Innergie, a brand of Delta Electronics, Inc.　　"GaN devices, capable of high-frequency operation, are highly anticipated for their contribution to miniaturization and energy savings, which can help achieve a decarbonized society. Reliable partners are crucial for implementing these innovations in society, and we are pleased to collaborate with TSMC, which possesses world-leading advanced manufacturing technology" said Katsumi Azuma, Member of the Board and Senior Managing Executive Officer at ROHM. “In addition to this partnership, by providing user-friendly GaN solutions that include control ICs to maximize GaN performance, we aim to promote the adoption of GaN in the automotive industry."　　“As we move forward with the next generations of our GaN process technology, TSMC and ROHM are extending our partnership to the development and production of GaN power devices for automotive applications,” said Chien-Hsin Lee, Senior Director of Specialty Technology Business Development at TSMC. “By combining TSMC's expertise in semiconductor manufacturing with ROHM's proficiency in power device design, we strive to push the boundaries of GaN technology and its implementation for EVs.”　　About TSMC　　TSMC pioneered the pure-play foundry business model when it was founded in 1987, and has been the world’s leading dedicated semiconductor foundry ever since. The Company supports a thriving ecosystem of global customers and partners with the industry’s leading process technologies and portfolio of design enablement solutions to unleash innovation for the global semiconductor industry. With global operations spanning Asia, Europe, and North America, TSMC serves as a committed corporate citizen around the world.　　 TSMC deployed 288 distinct process technologies, and manufactured 11,895 products for 528 customers in 2023 by providing broadest range of advanced, specialty and advanced packaging technology services. The Company is headquartered in Hsinchu, Taiwan.　　EcoGaN™ is a trademark or registered trademark of ROHM Co., Ltd.

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ROHM

Release time：2025-04-02 15:36 reading：498 Continue reading>>

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Renesas Introduces Highly Integrated LCD Video Processor that Enables Next-Generation ASIL B Automotive Display Systems

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced the RAA278830 Video Diagnostics Bridge IC, a highly integrated dual Low-Voltage Differential Signal (LVDS) LCD video processor. The new IC integrates many of the features necessary to design ISO 26262-compliant ASIL B automotive display systems such as heads-up-displays (HUD), digital instrument clusters, camera monitor systems (CMS), and electronic mirrors.　　As automotive safety systems are increasingly dependent on display systems, it has become more critical that clear, uncorrupted images be presented to the driver. Missing frames, frozen images, and even incorrect warning icons can seriously compromise driver safety. The RAA278830 addresses these concerns with Functional Safety features built into the device specifically to avoid any corruption of images through monitoring of the signal integrity as well as the video content itself. The internal diagnostics and measurement engines can detect frozen video, incorrect colors, broken or corrupt video images, as well as flashing, flickering, and video images that could obstruct the driver’s view of the road (in the case of HUD systems).　　Renesas’ Automotive Video Signal Processing Expertise　　Renesas has a long and successful track record of providing video signal processing solutions for the automotive market. In addition to standard analog video decoders, Renesas offers the award-winning Automotive HD-Link (AHL) family of products that enables high-resolution images to be transported over low-cost cables and connectors. The RAA278830 adds to Renesas’ leading line of integrated LCD controllers that have been implemented worldwide.　　Key Features of the RAA278830　　Dual Open-LDI Input/Output　　ISO 26262 Functional Safety ASIL B rating　　CRCs, parity, BIST, and redundancy safety mechanisms implemented throughout the entire data path　　Video Diagnostic Capabilities　　Input/Output monitoring of video timing, signal integrity, and content　　Flickering, flashing, occlusion, and glare detection　　Spread Spectrum for lower system level EMI profile　　Image enhancement engine for superior image quality　　Dual host interface: I2C & SPI (configurable)　　SPI-Flash based OSD as well as an embedded font based OSD　　SPI boot capability (boot from SPI Flash, no MCU needed)　　Supports multi-bank for fail-safe OTA updates　　Space-efficient 72SCQFN, 10mm x 10mm　　AEC-Q100 Grade 2 qualified　　“Our automotive customers have consistently asked us to add functional safety features to our industry-leading video processing technology,” said Jason Kim, Vice President and General Manager of the Configurable Mixed-Signal Division at Renesas. “The RAA278830 delivers all of the features needed to create safe, easy-to-implement and economical LCD display for all types of passenger vehicles.”

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Renesas

Release time：2025-04-01 14:36 reading：590 Continue reading>>

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NOVOSENSE Launches Automotive-Grade High-Side Switches for Body Control Modules and Zone Control Units

　　NOVOSENSE Microelectronics, a semiconductor company specializing in high-performance analog and mixed-signal chips, has announced a range of high-side switches for driving traditional resistive, inductive, and halogen lamp loads in automotive body control modules (BCM) as well as large capacitive loads commonly found in the first-level and second-level power distribution within zone control units (ZCU).　　At time of launch, the NSE34 and NSE35 families includes 26 single-, dual- and quad-channel devices developed for operation across 11 separate load currents intervals (11 A to sub-2 A). These devices have an Rds(on) resistance range from 8 mΩ to 140 mΩ and feature industry-leading load-driving capabilities and advanced diagnostic and protection functions such as advanced over-current protection and over-voltage clamping protection.　　All devices in the two families are fully compliant with multiple automotive standards, including AEC-Q100, AEC-Q100-006, AEC-Q100-012 Grade A, ISO7637, ISO16570 and CISPR25-2021 Class 5.　　Yang WANG, Product Line Marketing Director of NOVOSENSE said: “For electric and autonomous vehicles, body domain controllers have become increasingly important, enabling smart power distribution and functional integration. Indeed, they are essential for many applications, whether in resistive loads such as a seat heater, capacitive or halogen lamp loads for surge-current handling, or inductive loads such as in wipers, solenoids and relays, where it protects against negative voltage spikes.”　　The NSE34 and NSE35 families of high-side switches are available in 14- and 16-pin HSSOP packages measuring 4.9mm x 3.9mm respectively.

Key word：

NOVOSENSE

Release time：2024-11-06 14:11 reading：1491 Continue reading>>

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ROHM’s New PWM Controller ICs with SOP Package for Power Supply in a Wide Variety of Industrial Applications

　　ROHM has developed external FET-type controller ICs utilizing PWM current control mode optimized for AC-DC power supply in various industrial applications. Mass production has begun for four variants designed to drive a wide range of power semiconductors: the BD28C55FJ-LB for low-voltage MOSFETs, BD28C54FJ-LB for medium- to high-voltage MOSFETs, BD28C57LFJ-LB for IGBTs, and BD28C57HFJ-LB for SiC MOSFETs.　　Although the global semiconductor shortage is beginning to ease, the supply of semiconductor components for power supplies in industrial applications continues to lag behind demand. This is particularly true for PWM controller ICs, where the limited number of manufacturers has resulted in chronic shortages, leading to numerous requests for product development.　　In response, ROHM has developed PWM controller ICs that address the ongoing supply issue by meeting the industrial market’s stringent package and performance requirements. Depending upon the input AC voltage range of the application, a wide variety of semiconductors are used for power supply circuit. Each of these semiconductors demand different undervoltage lock out levels to prevent thermal runaway in case of supply/gate voltage drop. To solve this issue, ROHM has developed 4 variants with different undervoltage lock out levels.　　The new products feature an input voltage range of 6.9V to 28.0V, circuit current up to 2.0mA, maximum startup current of 75µA, and a maximum duty cycle of 50%, offered in the standard SOP-J8 package (equivalent to the JEDEC SOIC8). The products are pin to pin compatible to standard products commonly used in power supply circuits, thus reducing re-design and modification efforts. All variants are equipped with a self-recovery-type undervoltage lockout function (UVLO) with voltage hysteresis. This significantly improves application reliability by reducing the threshold voltage error to ±5%, compared to the typical ±10% of standard products.　　At the same time, these ICs are designated for long-term supply, thus ensuring continuous operation of long-life industrial equipment. Going forward, the lineup will be further expanded to include products suitable to drive high-voltage MOSFETs and GaN devices. More variants to support a maximum duty cycle of 100% are also being planned.　　Application ExamplesIndustrial equipment: AC-DC power supplies, motor drive inverters, and other AC-powered devices　　Product Information　　Applicable Part Nos: BD28C54FJ-LB, BD28C55FJ-LB, BD28C57HFJ-LB, BD28C57LFJ-LB　　TerminologyPWM Control Type　　Short for Pulse Width Modulation, a method for controlling power using semiconductors. The output power is controlled by varying the ratio of ON and OFF times within a fixed cycle.　　Duty Cycle　　The proportion of ON and OFF times as percentage of the switching period is known as ON- and OFF-duty cycle, respectively. It is common to refer to the ON-time ratio as the duty cycle. Duty Cycle (%) = Pulse Width (t) / Period (T).　　Self-Recovery Undervoltage Lockout Function (UVLO) with Voltage Hysteresis　　This function safety stops IC operation before the circuit inside the IC becomes abnormal when the input voltage drops below a threshold. For self-recovery types, the IC can become unstable by repeatedly stopping and starting near the threshold voltage, so a protection circuit with hysteresis is used to create a voltage difference between the stop and restart points.

Key word：

ROHM

Release time：2024-10-08 14:42 reading：789 Continue reading>>

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How to Discharge a Capacitor : A Step-by-Step Guide

　　Capacitors are essential components in electronic circuits, storing electrical energy for later use. However, when working with capacitors, it’s crucial to handle them properly to ensure safety and prevent damage. One important aspect of working with capacitors is “How to Discharge a Capacitor”. In this guide, we’ll walk you through the steps to safely discharge a capacitor, why it’s necessary, and the precautions you should take.　　What is capacitors?Before diving into the discharge process, it’s helpful to understand what capacitors are and how they function. A capacitor is an electrical component that stores and releases energy in the form of an electric charge. It consists of two conductive plates separated by an insulating material called a dielectric. When a capacitor is charged, it holds a voltage difference between its plates, which can persist even after power is disconnected.　　Why Discharge a Capacitor?1. Safety: Capacitors can retain a significant amount of charge even after the power is turned off. Discharging a capacitor is crucial to avoid electric shocks or damage to electronic components.　　2. Maintenance and Repair: When servicing electronic devices, discharging capacitors ensures that there are no residual charges that could interfere with repairs or adjustments.　　3. Circuit Design: In some cases, you might need to discharge a capacitor to reset or test electronic circuits.　　How to discharge a capacitor?1. Safety First: Power Off the Device　　– Unplug the Device: Ensure the device or circuit is completely disconnected from the power source. This is the most critical step in preventing electrical shocks.　　– Wait for a Safe Period: Even after disconnecting power, give the capacitor some time to self-discharge. However, don’t rely solely on this; always use proper discharge methods.　　2. Use Proper Discharge Tools　　– Discharge Tool: For high-voltage capacitors, it’s advisable to use a dedicated capacitor discharge tool, which often includes a resistor to safely dissipate the charge.　　– Insulated Tools: For lower-voltage capacitors, you can use insulated screwdrivers or pliers.　　3. Discharge Process　　– Connect the Discharge Tool: If using a discharge tool with a resistor, connect it across the capacitor’s terminals. If using a screwdriver, carefully touch the insulated handle to both terminals, ensuring you don’t touch the metal parts directly.　　– Hold for a Few Seconds: Allow the tool to stay in contact with the terminals for several seconds to ensure the capacitor is fully discharged.　　4. Verify the Capacitor is Discharged　　– Use a Multimeter: To confirm that the capacitor is completely discharged, use a multimeter to check the voltage across the terminals. A reading close to 0 volts indicates that the capacitor is safe to handle.　　5. Dispose of or Store Safely　　– Handling: Once discharged, handle the capacitor with care. If it’s to be reused, store it in a safe location where it won’t accidentally get recharged or come into contact with conductive materials.　　– Disposal: If you need to dispose of the capacitor, follow local electronic waste disposal regulations to ensure environmentally responsible handling.　　Precautions　　– Never Short the Terminals Directly: Directly shorting the capacitor terminals with a metal object can cause sparks, heat, and potential damage.　　– Use Insulated Equipment: Always use tools with proper insulation to avoid accidental electric shocks.　　– Handle with Care: Even discharged capacitors can have residual charges. Handle them carefully to avoid any accidental charge buildup.　　ConclusionDischarging a capacitor is a straightforward but essential task when working with electronic devices. By following these steps and taking the necessary precautions, you can ensure both your safety and the proper functioning of your electronic components. Always prioritize safety and use the appropriate tools to handle capacitors effectively. With these practices, you’ll be better equipped to handle capacitors in various electronic applications.

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capacitors

Release time：2024-09-25 15:20 reading：777 Continue reading>>

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Murata：Mass production begins for 0603M size copper electrode NTC thermistors, ideal for automotive applications

　　Murata Manufacturing Co., Ltd. (hereinafter “Murata”) has developed 0603M size (0.6 x 0.3 x 0.3 mm) copper electrode NTC thermistors “NCU03XH103F6SRL” and “NCU03XH103F60RL” (hereinafter “this product”) for markets such as the automotive market where there is a demand for high reliability electronic components. This product is an expansion of the NCU series size lineup. Mass production has already begun, and samples can also be provided.　　As advances are being made towards automated driving and IoT integration in the automotive market, circuit boards are being made with an increasingly larger number of electronic components, and in turn, higher component densities. With the increasing sophistication of ADAS*1/telematics technologies*2, there are higher loads on electronic components, amplifying the issue of component overheating. As a result, there is a heightened demand for overheating detection and temperature monitoring technologies.　　We have taken advantage of Murata’s years of processing technology development experience to create a 0603M size (0.6 x 0.3 x 0.3 mm) product that can be used for high reliability applications. Compared to Murata’s existing products (1005M size), this product has an approximately 80% lower volume and approximately 70% smaller mounting area.　　Murata will continue to expand our product lineup to meet market demand. By responding quickly to market demand, we also contribute to further improvements in circuit board component densities and downsizing of devices for high reliability applications.　　*1ADAS: Advanced Driver Assistance System　　*2Telematics technology: Devices that use communications technology installed in vehicles to collect and transmit driver and vehicle data and share information in real time. Main applications of this technology include navigation systems that collect traffic information to help drivers avoid traffic jams and voice recognition services used to operate in-car features.　　Features　　Works with automobiles and other systems that require high reliability components. Downsizing (0603M size) achieved with copper electrodes.　　Approximately 80% lower volume and approximately 70% smaller mounting area than Murata’s existing products (1005M size). Because this product has the same characteristics as our existing products, there is no need to change the circuit board design when replacing an existing product with this product. This product will also help our customers increase their component density and save space on the circuit board.　　Small in volume and capable of fast response.　　Specifications

Key word：

murata

Release time：2024-08-28 15:21 reading：918 Continue reading>>

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BIWIN Wins India's "The Most Extensive Range Memory Solutions Provider" Award

　　June 28th had witnessed the successful hosting of the 16th NCN-ICT India Partner Summit 2024 at New Delhi, India. In the midst of the celebrations, BIWIN was honored with the esteemed “The Most Extensive Range Memory Solutions Provider of 2023 Award”, a reflection of its unwavering dedication to excellence and innovation.　　BIWIN is the Winner of “The Most Extensive Range Memory Solutions Provider of 2023”　　As an annual event that celebrates the achievements and contributions of key players in the ICT industry, the NCN-ICT Summit Awards brought together industry leaders, corporate executives, distributors, and resellers from India and abroad. It serves as a platform for industry professionals to gain insights into the latest innovations, share best practices, and explore new business opportunities.　　Through a combination of online voting and evaluations conducted by a panel of experts and judges, this accolade is a testament to BIWIN’s commitment to delivering a comprehensive range of high-performance memory solutions and pushing forward with innovation and product expansion.　　Recognized as a leader in the storage industry, BIWIN offers a comprehensive range of embedded flash-based storage solutions, including mobile phones, education devices, tablets, gaming machines, smart wearables, UAVs, action cameras, in-vehicle systems, DVR/NVRs, servers, OTT boxes, routers, and more. By providing tailored storage solutions, BIWIN supports innovation and advancement in these diverse technology areas.　　Attending on behalf of BIWIN, Rajesh Khurana, Country Manager for Consumer Business, was honored to participate in the NCN-ICT Summit & Awards Night 2024 and accept the awards. He expressed heartfelt gratitude for the industry recognition and committed to integrating purpose-driven initiatives into BIWIN’s future work. Khurana emphasized that these efforts will not only honor the awards but also elevate BIWIN to new industry heights.　　Rajesh Khurana was also privileged to be part of a renowned panel at the 16th Annual NCN-ICT Partners Summit, which was joined by top industry leaders from Geonix, Savex, Synersoft, Kaspersky and Micron. The discussion focused on the next big thing in ICT technology and examined the need for new business approaches, emerging ICT technologies, and changing business dynamics, as well as their impact on the vendor-partner ecosystem.　　As noted by Rajesh Khurana, industry projections indicate that the memory market is expected to experience continued growth in the coming years, especially with the advancement of AI technologies, big data and Internet of Things which set to drive the demand to new levels. BIWIN will also endeavor to provide improved memory solutions for customers while contributing to the industry’s future development.

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BIWIN

Release time：2024-08-20 13:46 reading：1064 Continue reading>>

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Understanding Schottky Diode : A Comprehensive Guide

　　Schottky diode is semiconductor devices with a unique structure and properties that make it indispensable in various electronic applications. Understanding their principles of operation, advantages, and applications is crucial for engineers and enthusiasts alike. This guide aims to provide a detailed overview of Schottky diodes to help readers grasp their significance in modern electronics.　　What is a Schottky diode?A Schottky diode, named after the physicist Walter H. Schottky, is a type of semiconductor diode with a unique construction and operating principle. Schottky diodes are also commonly referred to as Schottky barrier diodes or hot carrier diodes. Unlike conventional p-n junction diodes, which consist of a junction between p-type and n-type semiconductor materials, Schottky diodes are formed by the junction of a metal (often a transition metal like platinum or tungsten) with a semiconductor material (usually silicon).　　What is a Schottky diode used for?Schottky diodes find application in a wide range of electronic circuits. They are commonly used in:　　Rectification circuits: Schottky diodes are efficient rectifiers due to their low forward voltage drop, making them ideal for converting alternating current (AC) to direct current (DC) in power supplies and voltage regulators.　　High-frequency applications: Their fast switching speed and low junction capacitance make Schottky diodes suitable for high-frequency applications such as RF (radio frequency) detectors, mixers, and oscillators.　　Protection circuits: Schottky diodes are often employed to protect sensitive electronic components from voltage spikes and reverse polarity damage in circuits such as overvoltage protection and reverse current protection.　　What are the advantages and disadvantages of Schottky diode?Advantages:　　Low forward voltage drop: Typically around 0.3 V, leading to lower power losses and higher efficiency in rectification applications.　　Fast switching speed: Due to their majority carrier conduction mechanism, Schottky diodes have minimal minority carrier storage time, resulting in rapid switching characteristics.　　High temperature operation: Schottky diodes can operate at higher temperatures compared to conventional silicon diodes.　　Compact size: Their smaller junction area and simpler construction allow for compact designs in integrated circuits.　　Disadvantages:　　Lower reverse breakdown voltage: Schottky diodes typically have lower reverse breakdown voltage ratings compared to silicon diodes, limiting their use in high-voltage applications.　　Higher leakage current: Schottky diodes exhibit higher reverse leakage current compared to silicon diodes, which may be undesirable in certain low-power applications.　　Sensitivity to temperature variations: The forward voltage drop of Schottky diodes is sensitive to temperature changes, which can affect their performance in some applications.　　What is the difference between Schottky diode and silicon diode?The primary differences between Schottky diodes and silicon diodes lie in their construction, operating principles, and resulting characteristics:　　Construction:　　Schottky Diode: Schottky diodes are formed by the junction of a metal (usually a transition metal like platinum or tungsten) with a semiconductor material (typically silicon). This metal-semiconductor junction is known as a Schottky barrier.　　Silicon Diode: Silicon diodes consist of a junction between two differently doped regions of silicon semiconductor material, forming a p-n junction.　　Operating Principle:　　Schottky Diode: Schottky diodes conduct current primarily through majority carriers (electrons for n-type semiconductor), resulting in faster switching speeds and lower forward voltage drops. They do not rely on the diffusion of minority carriers for conduction.　　Silicon Diode: Silicon diodes conduct current through both majority and minority carriers. In forward bias, majority carriers (holes in the p-type region and electrons in the n-type region) flow across the junction, while in reverse bias, minority carriers (electrons in the p-type region and holes in the n-type region) contribute to the reverse current flow.　　Forward Voltage Drop:　　Schottky Diode: Schottky diodes typically have a lower forward voltage drop (around 0.3 V) compared to silicon diodes. This is due to the absence of the depletion region present in p-n junction diodes, resulting in lower power losses and higher efficiency in rectification applications.　　Silicon Diode: Silicon diodes have a higher forward voltage drop (around 0.6 V to 0.7 V for standard silicon diodes). This is primarily because of the depletion region formed at the p-n junction, which requires a certain voltage to overcome before significant current can flow.　　Reverse Breakdown Voltage:　　Schottky Diode: Schottky diodes typically have lower reverse breakdown voltage ratings compared to silicon diodes. This limits their use in high-voltage applications.　　Silicon Diode: Silicon diodes generally have higher reverse breakdown voltage ratings, making them suitable for high-voltage applications where reverse bias conditions are encountered.　　Switching Speed:　　Schottky Diode: Due to their majority carrier conduction mechanism and absence of minority carrier storage time, Schottky diodes have minimal switching times, making them suitable for high-frequency applications.　　Silicon Diode: Silicon diodes typically have slower switching speeds compared to Schottky diodes due to the presence of minority carrier storage time.　　What is the working principle of Schottky diode?　　The operation of a Schottky diode is based on the formation of a metal-semiconductor junction, also known as a Schottky barrier. When a metal (such as platinum or tungsten) is brought into contact with a semiconductor material (usually silicon), a potential barrier is formed at the interface due to differences in the work functions of the metal and semiconductor. This barrier prevents majority carriers (electrons in an n-type semiconductor) from easily crossing the junction under reverse bias conditions.　　Under forward bias, electrons from the semiconductor flow into the metal, while holes from the metal flow into the semiconductor, resulting in current flow across the junction. Since Schottky diodes do not rely on the diffusion of minority carriers for conduction, they have a lower forward voltage drop and faster switching speed compared to conventional silicon diodes.　　How do I identify a Schottky diode?Schottky diodes can be identified by several characteristics:　　Forward voltage drop: Schottky diodes typically have a lower forward voltage drop (around 0.3 V) compared to silicon diodes.　　Symbol: In circuit diagrams, Schottky diodes are represented by a symbol resembling a regular diode but with a flat line or bar across the cathode end, indicating the metal-semiconductor junction.　　Markings: Schottky diodes are often labeled with their part number and may include the letters “SCH” or “SKY” in the part number to indicate their Schottky nature.　　Datasheets: Referencing the datasheet of a diode can provide information on its characteristics, including whether it is a Schottky diode.　　How do I choose a Schottky diode?When choosing a Schottky diode for a specific application, consider the following factors:　　Forward voltage drop: Select a diode with a forward voltage drop suitable for your application requirements to minimize power losses.　　Reverse voltage rating: Ensure that the diode’s reverse voltage rating exceeds the maximum reverse voltage expected in your circuit.　　Forward current rating: Choose a diode with a forward current rating sufficient for the maximum current expected in your circuit.　　Switching speed: Consider the switching speed requirements of your application and choose a diode with a fast enough recovery time.　　Temperature range: Verify that the diode can operate within the temperature range of your application.　　What is the maximum voltage of a Schottky diode?The maximum voltage (reverse voltage rating) of a Schottky diode varies depending on its specific construction and design. Commonly available Schottky diodes have reverse voltage ratings ranging from a few volts to a few hundred volts. It is essential to consult the datasheet of the diode to determine its maximum voltage rating and ensure it meets the requirements of your application.　　Conclusion　　Schottky diodes play a vital role in modern electronics, offering advantages such as low forward voltage drop, fast switching speed, and suitability for high-frequency applications. While they have limitations such as lower reverse breakdown voltage and higher leakage current compared to silicon diodes, their unique properties make them indispensable in various circuits. Understanding the principles of operation and key characteristics of Schottky diodes is essential for selecting the right component for specific applications and maximizing their performance in electronic designs.

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Schottky diode

Release time：2024-07-02 13:09 reading：708 Continue reading>>

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